IndiumV3, Main, Repository, bibRecord, 001A45

Impact of Al2O3 Passivation Thickness in Highly Scaled GaN HEMTs

Identifieur interne : 001A45 ( Main/Repository ); précédent : 001A44; suivant : 001A46

Impact of Al2O3 Passivation Thickness in Highly Scaled GaN HEMTs

Auteurs : RBID : Pascal:12-0300369

Descripteurs français

Pascal (Inist)
- Passivation, Transistor mobilité électron élevée, Caractéristique courant tension, Courant continu, Caractéristique électrique, Capacité électrique, Gain courant, Fréquence coupure, Alumine, Nitrure de gallium, Composé binaire, Nitrure d'indium, Nitrure d'aluminium, Composé quaternaire, Al2O3, GaN, InAlGaN, Effet DIBL.

English descriptors

KwdEn :
- Alumina, Aluminium nitride, Binary compound, Capacitance, Current gain, Cut off frequency, DIBL effect, Direct current, Electrical characteristic, Gallium nitride, High electron mobility transistor, Indium nitride, Passivation, Quaternary compound, Voltage current curve.

Abstract

This letter studies the influence of the passivation thickness on the device characteristics of InAlGaN/GaN high-electron-mobility transistors with a gate length between sub-30 and 70 nm. As the Al₂O₃ passivation thickness increases, the current collapse in 80-μs pulsed-I-V measurements decreases from 30% to 13%, while dc characteristics are almost unchanged with the exception of increasing drain-induced barrier lowering. The thicker passivation increases the fringing gate capacitance, which can be about 30% of the total gate capacitance in the devices with a gate length below 35 nm. This capacitance results in a significant drop of current-gain cutoff frequency (f_T), and its effect is more important in the shorter gate length devices.

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Pascal:12-0300369

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Impact of Al<sub>2</sub>
O<sub>3</sub>
 Passivation Thickness in Highly Scaled GaN HEMTs</title>
<author><name>DONG SEUP LEE</name>
<affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Microsystems Technology Laboratories, Massachusetts Institute of Technology</s1>
<s2>Cambridge, MA 02139</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<placeName><settlement type="city">Cambridge (Massachusetts)</settlement>
<region type="state">Massachusetts</region>
</placeName>
<orgName type="university">Massachusetts Institute of Technology</orgName>
</affiliation>
</author>
<author><name sortKey="Laboutin, Oleg" uniqKey="Laboutin O">Oleg Laboutin</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Kopin Corporation</s1>
<s2>Taunton, MA 02780</s2>
<s3>USA</s3>
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<country>États-Unis</country>
<wicri:noRegion>Kopin Corporation</wicri:noRegion>
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<author><name>YU CAO</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Kopin Corporation</s1>
<s2>Taunton, MA 02780</s2>
<s3>USA</s3>
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<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Kopin Corporation</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Johnson, Wayne" uniqKey="Johnson W">Wayne Johnson</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Kopin Corporation</s1>
<s2>Taunton, MA 02780</s2>
<s3>USA</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
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<country>États-Unis</country>
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</author>
<author><name sortKey="Beam, Edward" uniqKey="Beam E">Edward Beam</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Triquint Semiconductor Inc.</s1>
<s2>Richardson, TX 75080</s2>
<s3>USA</s3>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
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<country>États-Unis</country>
<wicri:noRegion>Triquint Semiconductor Inc.</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Ketterson, Andrew" uniqKey="Ketterson A">Andrew Ketterson</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Triquint Semiconductor Inc.</s1>
<s2>Richardson, TX 75080</s2>
<s3>USA</s3>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
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<country>États-Unis</country>
<wicri:noRegion>Triquint Semiconductor Inc.</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Saunier, Paul" uniqKey="Saunier P">Paul Saunier</name>
<affiliation wicri:level="1"><inist:fA14 i1="03"><s1>Triquint Semiconductor Inc.</s1>
<s2>Richardson, TX 75080</s2>
<s3>USA</s3>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Triquint Semiconductor Inc.</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Palacios, Tom S" uniqKey="Palacios T">Tom S Palacios</name>
<affiliation wicri:level="4"><inist:fA14 i1="01"><s1>Microsystems Technology Laboratories, Massachusetts Institute of Technology</s1>
<s2>Cambridge, MA 02139</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>8 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<placeName><settlement type="city">Cambridge (Massachusetts)</settlement>
<region type="state">Massachusetts</region>
</placeName>
<orgName type="university">Massachusetts Institute of Technology</orgName>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">12-0300369</idno>
<date when="2012">2012</date>
<idno type="stanalyst">PASCAL 12-0300369 INIST</idno>
<idno type="RBID">Pascal:12-0300369</idno>
<idno type="wicri:Area/Main/Corpus">001A82</idno>
<idno type="wicri:Area/Main/Repository">001A45</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0741-3106</idno>
<title level="j" type="abbreviated">IEEE electron device lett.</title>
<title level="j" type="main">IEEE electron device letters</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Alumina</term>
<term>Aluminium nitride</term>
<term>Binary compound</term>
<term>Capacitance</term>
<term>Current gain</term>
<term>Cut off frequency</term>
<term>DIBL effect</term>
<term>Direct current</term>
<term>Electrical characteristic</term>
<term>Gallium nitride</term>
<term>High electron mobility transistor</term>
<term>Indium nitride</term>
<term>Passivation</term>
<term>Quaternary compound</term>
<term>Voltage current curve</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Passivation</term>
<term>Transistor mobilité électron élevée</term>
<term>Caractéristique courant tension</term>
<term>Courant continu</term>
<term>Caractéristique électrique</term>
<term>Capacité électrique</term>
<term>Gain courant</term>
<term>Fréquence coupure</term>
<term>Alumine</term>
<term>Nitrure de gallium</term>
<term>Composé binaire</term>
<term>Nitrure d'indium</term>
<term>Nitrure d'aluminium</term>
<term>Composé quaternaire</term>
<term>Al2O3</term>
<term>GaN</term>
<term>InAlGaN</term>
<term>Effet DIBL</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">This letter studies the influence of the passivation thickness on the device characteristics of InAlGaN/GaN high-electron-mobility transistors with a gate length between sub-30 and 70 nm. As the Al<sub>2</sub>
O<sub>3</sub>
 passivation thickness increases, the current collapse in 80-μs pulsed-I-V measurements decreases from 30% to 13%, while dc characteristics are almost unchanged with the exception of increasing drain-induced barrier lowering. The thicker passivation increases the fringing gate capacitance, which can be about 30% of the total gate capacitance in the devices with a gate length below 35 nm. This capacitance results in a significant drop of current-gain cutoff frequency (f<sub>T</sub>
), and its effect is more important in the shorter gate length devices.</div>
</front>
</TEI>
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<fA08 i1="01" i2="1" l="ENG"><s1>Impact of Al<sub>2</sub>
O<sub>3</sub>
 Passivation Thickness in Highly Scaled GaN HEMTs</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>DONG SEUP LEE</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>LABOUTIN (Oleg)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>YU CAO</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>JOHNSON (Wayne)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>BEAM (Edward)</s1>
</fA11>
<fA11 i1="06" i2="1"><s1>KETTERSON (Andrew)</s1>
</fA11>
<fA11 i1="07" i2="1"><s1>SAUNIER (Paul)</s1>
</fA11>
<fA11 i1="08" i2="1"><s1>PALACIOS (Tomás)</s1>
</fA11>
<fA14 i1="01"><s1>Microsystems Technology Laboratories, Massachusetts Institute of Technology</s1>
<s2>Cambridge, MA 02139</s2>
<s3>USA</s3>
<sZ>1 aut.</sZ>
<sZ>8 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>Kopin Corporation</s1>
<s2>Taunton, MA 02780</s2>
<s3>USA</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
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<fA14 i1="03"><s1>Triquint Semiconductor Inc.</s1>
<s2>Richardson, TX 75080</s2>
<s3>USA</s3>
<sZ>5 aut.</sZ>
<sZ>6 aut.</sZ>
<sZ>7 aut.</sZ>
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<fA20><s1>976-978</s1>
</fA20>
<fA21><s1>2012</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>222V</s2>
<s5>354000506633360200</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2012 INIST-CNRS. All rights reserved.</s1>
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<fA45><s0>11 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>12-0300369</s0>
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<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
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</fA64>
<fA66 i1="01"><s0>USA</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>This letter studies the influence of the passivation thickness on the device characteristics of InAlGaN/GaN high-electron-mobility transistors with a gate length between sub-30 and 70 nm. As the Al<sub>2</sub>
O<sub>3</sub>
 passivation thickness increases, the current collapse in 80-μs pulsed-I-V measurements decreases from 30% to 13%, while dc characteristics are almost unchanged with the exception of increasing drain-induced barrier lowering. The thicker passivation increases the fringing gate capacitance, which can be about 30% of the total gate capacitance in the devices with a gate length below 35 nm. This capacitance results in a significant drop of current-gain cutoff frequency (f<sub>T</sub>
), and its effect is more important in the shorter gate length devices.</s0>
</fC01>
<fC02 i1="01" i2="X"><s0>001D03F04</s0>
</fC02>
<fC03 i1="01" i2="X" l="FRE"><s0>Passivation</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="ENG"><s0>Passivation</s0>
<s5>01</s5>
</fC03>
<fC03 i1="01" i2="X" l="SPA"><s0>Pasivación</s0>
<s5>01</s5>
</fC03>
<fC03 i1="02" i2="X" l="FRE"><s0>Transistor mobilité électron élevée</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="ENG"><s0>High electron mobility transistor</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="X" l="SPA"><s0>Transistor movibilidad elevada electrones</s0>
<s5>02</s5>
</fC03>
<fC03 i1="03" i2="X" l="FRE"><s0>Caractéristique courant tension</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="ENG"><s0>Voltage current curve</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="X" l="SPA"><s0>Característica corriente tensión</s0>
<s5>03</s5>
</fC03>
<fC03 i1="04" i2="X" l="FRE"><s0>Courant continu</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="ENG"><s0>Direct current</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="X" l="SPA"><s0>Corriente contínua</s0>
<s5>04</s5>
</fC03>
<fC03 i1="05" i2="X" l="FRE"><s0>Caractéristique électrique</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="ENG"><s0>Electrical characteristic</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="X" l="SPA"><s0>Característica eléctrica</s0>
<s5>05</s5>
</fC03>
<fC03 i1="06" i2="X" l="FRE"><s0>Capacité électrique</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="ENG"><s0>Capacitance</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="X" l="SPA"><s0>Capacitancia</s0>
<s5>06</s5>
</fC03>
<fC03 i1="07" i2="X" l="FRE"><s0>Gain courant</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="ENG"><s0>Current gain</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="X" l="SPA"><s0>Ganancia corriente</s0>
<s5>07</s5>
</fC03>
<fC03 i1="08" i2="X" l="FRE"><s0>Fréquence coupure</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="ENG"><s0>Cut off frequency</s0>
<s5>08</s5>
</fC03>
<fC03 i1="08" i2="X" l="SPA"><s0>Frecuencia corte</s0>
<s5>08</s5>
</fC03>
<fC03 i1="09" i2="X" l="FRE"><s0>Alumine</s0>
<s2>NK</s2>
<s5>22</s5>
</fC03>
<fC03 i1="09" i2="X" l="ENG"><s0>Alumina</s0>
<s2>NK</s2>
<s5>22</s5>
</fC03>
<fC03 i1="09" i2="X" l="SPA"><s0>Alúmina</s0>
<s2>NK</s2>
<s5>22</s5>
</fC03>
<fC03 i1="10" i2="X" l="FRE"><s0>Nitrure de gallium</s0>
<s5>23</s5>
</fC03>
<fC03 i1="10" i2="X" l="ENG"><s0>Gallium nitride</s0>
<s5>23</s5>
</fC03>
<fC03 i1="10" i2="X" l="SPA"><s0>Galio nitruro</s0>
<s5>23</s5>
</fC03>
<fC03 i1="11" i2="X" l="FRE"><s0>Composé binaire</s0>
<s5>24</s5>
</fC03>
<fC03 i1="11" i2="X" l="ENG"><s0>Binary compound</s0>
<s5>24</s5>
</fC03>
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<s5>24</s5>
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<s5>25</s5>
</fC03>
<fC03 i1="12" i2="X" l="ENG"><s0>Indium nitride</s0>
<s5>25</s5>
</fC03>
<fC03 i1="12" i2="X" l="SPA"><s0>Indio nitruro</s0>
<s5>25</s5>
</fC03>
<fC03 i1="13" i2="X" l="FRE"><s0>Nitrure d'aluminium</s0>
<s5>26</s5>
</fC03>
<fC03 i1="13" i2="X" l="ENG"><s0>Aluminium nitride</s0>
<s5>26</s5>
</fC03>
<fC03 i1="13" i2="X" l="SPA"><s0>Aluminio nitruro</s0>
<s5>26</s5>
</fC03>
<fC03 i1="14" i2="X" l="FRE"><s0>Composé quaternaire</s0>
<s5>27</s5>
</fC03>
<fC03 i1="14" i2="X" l="ENG"><s0>Quaternary compound</s0>
<s5>27</s5>
</fC03>
<fC03 i1="14" i2="X" l="SPA"><s0>Compuesto cuaternario</s0>
<s5>27</s5>
</fC03>
<fC03 i1="15" i2="X" l="FRE"><s0>Al2O3</s0>
<s4>INC</s4>
<s5>82</s5>
</fC03>
<fC03 i1="16" i2="X" l="FRE"><s0>GaN</s0>
<s4>INC</s4>
<s5>83</s5>
</fC03>
<fC03 i1="17" i2="X" l="FRE"><s0>InAlGaN</s0>
<s4>INC</s4>
<s5>84</s5>
</fC03>
<fC03 i1="18" i2="X" l="FRE"><s0>Effet DIBL</s0>
<s4>CD</s4>
<s5>96</s5>
</fC03>
<fC03 i1="18" i2="X" l="ENG"><s0>DIBL effect</s0>
<s4>CD</s4>
<s5>96</s5>
</fC03>
<fC07 i1="01" i2="X" l="FRE"><s0>Composé III-VI</s0>
<s5>09</s5>
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<fC07 i1="01" i2="X" l="ENG"><s0>III-VI compound</s0>
<s5>09</s5>
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<fC07 i1="01" i2="X" l="SPA"><s0>Compuesto III-VI</s0>
<s5>09</s5>
</fC07>
<fC07 i1="02" i2="X" l="FRE"><s0>Composé III-V</s0>
<s5>10</s5>
</fC07>
<fC07 i1="02" i2="X" l="ENG"><s0>III-V compound</s0>
<s5>10</s5>
</fC07>
<fC07 i1="02" i2="X" l="SPA"><s0>Compuesto III-V</s0>
<s5>10</s5>
</fC07>
<fN21><s1>226</s1>
</fN21>
<fN44 i1="01"><s1>OTO</s1>
</fN44>
<fN82><s1>OTO</s1>
</fN82>
</pA>
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Impact of Al2O3 Passivation Thickness in Highly Scaled GaN HEMTs

Impact of Al2O3 Passivation Thickness in Highly Scaled GaN HEMTs

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